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GUVB-S11SD UV-B Sensor Aluminium Gallium Nitride Based Material

Post Date:

2018/12/04 17:03:10

Expired Date:

2019/03/04 23:59:59

Trade Leads Category:

Photosensors

Company Info

Shenzhen Week Technology Ltd.
Contact Person: Yan Zhang
Address: 16 Floor, Building #3, Zhongke Mansion, Gaoxin South 1St Rd, Hi-Tech Park, Nanshan
City: SHENZHEN
State/Province: GUANGDONG
Country/Region: China (mainland)
Zip/Post Code: 518067


Details

1. GUVB-S11SD UV-B Sensor Ftatures

- Chip size:0.4mm,SMD 3528 PKG
- Aluminium Gallium Nitride Based Material
- Schottky-type Photodiode
- Photovoltaic Mode Operation
- Good Visible Blindness
- High Responsivity & Low Dark Current

2. GUVB-S11SD UV-B Sensor Application

UV Index Monitoring

 

3. GUVB-S11SD UV-B Sensor Outline Diagrams and Dimensions


4. GUVB-S11SD UV-B Sensor Absolute Maximum Ratings

Storage Temperature: -40~90℃
Operating Temperature: -30~85℃
Reverse Voltage: 3V
Forward Current: 1mA
Optical Source Power Range: 0.1µ~100m W/cm2
Soldering Temperature: 260℃

5. Characteristics (at 25℃)
Dark Current: 1nA
Temperature Coefficient: 0.1%/℃
Responsivity: 0.11A/W
Spectral Detection Range: 240~320nm
Active area: 0.076mm2

 

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