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SG01M-5Lens Concentrator Lens SiC Based UV Photodiode

Post Date:

2019/01/11 16:55:03

Expired Date:

2019/04/11 23:59:59

Trade Leads Category:


Company Info

Shenzhen Week Technology Ltd.
Contact Person: Yan Zhang
Address: 16 Floor, Building #3, Zhongke Mansion, Gaoxin South 1St Rd, Hi-Tech Park, Nanshan
State/Province: GUANGDONG
Country/Region: China (mainland)
Zip/Post Code: 518067


SiC based UV photodiode SG01M-5LENS
Concentrator lens SiC based UV photodiode Avirtual = 11.0 mm2
1.SG01M-5LENS UV photodiode GeneraL Features
Properties of the SG01M-5LENS UV photodiode
● Broadband UVA+UVB+UVC, PTB reported high chip stability, for very weak radiation
● Radiation sensitive area A = 11.0 mm2
● TO5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin
● 10μW/cm2 peak radiation results a current of approx. 140 nA
About the material Silicon Carbide (SiC)
SiC provides the unique property of extreme radiation hardness, near-perfect visible  blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV de-tectors. The SiC detectors can be permanently operated at up to 170℃ (338℉). The temperature coefficient of signal (responsivity) is also low, < 0.1%/K. Because of the low noise  (dark current in the fA range),  very low UV radiation intensities can be measured reliably. Please note that this device needs an appropriate amplifier (see typical circuit on page 3).
SiC photodiodes are available with seven different active chip areas from 0.06 mm2 up to 36 mm2. Standard version is broadband UVA-UVB-UVC. Four filtered versions lead to a tighter sensitivity range. All photodiodes have a hermeti-cally sealed metal housing (TO type), either a 5.5 mm diameter TO18 housing or a 9.2 mm TO5 housing. Further op-tion is either a 2 pin header (1 isolated, 1 grounded) or a 3 pin header (2 isolated, 1 grounded).

2.SG01M-5LE UV photodiode Specifications
Spectral Characteristics
Typical Responsivity at Peak Wavelength: 0.130 A/W
Wavelength of max. Spectral Responsivity: 280nm
Responsivity Range (S=0.1*Smax ): 221 … 358nm
Visible Blindness (Smax/S >405nm ):>10 10 
General Characteristics (T=25'C)
Sensitive Area (chip size = 0.50 mm 2 ): 11.0 mm2
Dark Current (1V reverse bias): 0.7fA
Capacitance: 50pF
Short Circuit (10μW/cm 2 at peak): 140nA
Temperature Coefficient: 0.1%/K
Maximum Ratings
Operating Temperature: –55 … +170 °C
Storage Temperature: –55 … +170 °C
Soldering Temperature (3s): 260°C
Reverse Voltage: 20V 

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