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SG01S-18 Broadband SiC Based UV Photodiode

Post Date:

2018/12/19 15:59:16

Expired Date:

2019/03/19 23:59:59

Trade Leads Category:


Company Info

Shenzhen Week Technology Ltd.
Contact Person: Yan Zhang
Address: 16 Floor, Building #3, Zhongke Mansion, Gaoxin South 1St Rd, Hi-Tech Park, Nanshan
State/Province: GUANGDONG
Country/Region: China (mainland)
Zip/Post Code: 518067


Broadband SiC based UV photodiode A = 0.06 mm2


◆ SG01S-18 UV Photodiode General Feature


Properties of the SG01S-18 UV Photodiode
• Broadband UVA+UVB+UVC, PTB reported high chip stability
• Active Area A = 0.06 mm2
• TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
• 10mW/cmpeak radiation results a current of approx. 780 nA


About the material Silicon Carbide (SiC)

SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise.These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C (338°F). The temperature coeffiient of signal(responsivity) is also low, < 0.1%/K. Because of the low noise (dark current in the fA range), very low UV radiation intensities can be measured reliably. 



SiC photodiodes are available with seven different active chip areas from 0.06 mm2 up to 36 mm2. Standard version is broadband UVA-UVB-UVC. Four fitered versions lead to a tighter sensitivity range. All photodiodes have a hermetically sealed metal housing (TO type), either a 5.5 mm diameter TO18 housing or a 9.2 mm TO5 housing. Further option is either a 2 pin header (1 isolated, 1 grounded) or a 3 pin header (2 isolated, 1 grounded).


◆ SG01S-18 UV Photodiode Nomenclature


◆ SG01S-18 UV Photodiode SpecIfication

Parameter Symbol Value Unit
Spectral Characteristics      
Typical Responsivity at Peak Wavelength Smax 0.130 AW-1
Wavelength of max. Spectral Responsivity λmax 280 nm
Responsivity Range (S=0.1*Smax) 221 … 358 nm
Visible Blindness (Smax/S>405nm) VB > 1010
General Characteristics (T=25°C)      
Active Area A 0.06 mm2
Dark Current (1V reverse bias) Id 0.2 fA
Capacitance C 15 pF
Short Circuit (10mW/cm2 at peak) Io 780 nA
Temperature Coefficient Tc < 0.1 %/K
Maximum Ratings      
Operating Temperature Topt -55 … +170 °C
Storage Temperature Tstor -55 … +170 °C
Soldering Temperature (3s) Tsold 260 °C
Reverse Voltage VRmax 20 V

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