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SG01D-5Lens Concentrator Lens SiC UV Photodiode

Post Date:

2018/12/28 16:48:50

Expired Date:

2019/03/28 23:59:59

Trade Leads Category:


Company Info

Shenzhen Week Technology Ltd.
Contact Person: Yan Zhang
Address: 16 Floor, Building #3, Zhongke Mansion, Gaoxin South 1St Rd, Hi-Tech Park, Nanshan
State/Province: GUANGDONG
Country/Region: China (mainland)
Zip/Post Code: 518067



‍‍Concentrator lens SiC based UV photodiode Avirtual = 11.0 mm2‍‍



◆ SG01D-5Lens SiC UV Photodiode General features


Properties of the SG01D-5LENS UV photodiode
• Broadband UVA+UVB+UVC, PTB reported high chip stability, for fame detection
• Radiation sensitive area A = 11.0 mm2
• TO5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin
• 10µW/cm2 peak radiation results a current of approx. 350 nA


About the material Silicon Carbide (SiC)
SiC provides  the unique property of  extreme  radiation hardness, near-perfect  visible blindness,  low dark  current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C (338°F). The temperature coeffcient of signal (responsivity)  is also  low, < 0.1%/K. Because of the  low noise (dark current  in the fA range), very  low UV radiation intensities can be measured reliably. 

SiC photodiodes are available with seven different active chip areas from 0.06 mm2 up to 36 mm2 Standard version is broadband UVA-UVB-UVC. Four fltered versions lead to a tighter sensitivity range. All photodiodes have a hermetically sealed metal housing (TO type), either a 5.5 mm diameter TO18 housing or a 9.2 mm TO5 housing. Further option is either a 2 pin header (1 isolated, 1 grounded) or a 3 pin header (2 isolated, 1 grounded).

◆ SG01D-5Lens SiC UV Photodiode Specifications‍

Parameter Symbol Value Unit
Spectral Characteristics      
Typical Responsivity at Peak Wavelength Smax 0.130 AW-1
Wavelength of max. Spectral Responsivity λmax 280 nm
Responsivity Range (S=0.1*Smax) 221 … 358 nm
Visible Blindness (Smax/S>405nm) VB > 1010
General Characteristics (T=25°C)      
Sensitive Area (chip size = 0.50 mm2) A 11.0 mm2
Dark Current (1V reverse bias) Id 1.7 fA
Capacitance C 125 pF
Short Circuit (10µW/cm2 at peak) Io 350 nA
Temperature Coefficient Tc < 0.1 %/K
Maximum Ratings      
Operating Temperature Topt -55 … +170 °C
Storage Temperature Tstor -55 … +170 °C
Soldering Temperature (3s) Tsold 260 °C
Reverse Voltage VRmax 20 V

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