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  • High Purity Antimony

    High Purity Antimony 5N 6N 7N Impurity ppm max each (ICP-MS) Sb-99.999% As 1.0 total impurity 10ppm Sb-99.995% As 0.5 total impurity 10ppm Sb-99.9999% As 0.30, total impurity 1ppm Sb-99.99999% Zn...

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    Last Online Date: 07/11/2017 Last Update Date: 07/12/2017

  • High Purity Tellurium From Sichuan Western Minmetals

    High Purity Tellurium 5N, 6N, 7N Impurity: PPM Max each (ICP-MS) Te 5N Ag/Cu/Cd/Al/Mg/Ni/Fe/Sn/Pb 0.5, Se 1.0 Te 6N Zn/Ca/ 0.02, Ag/Cu 0.002, Al/Ni/Pb/Fe/Cd 0.01, Mg 0.008, Se 0.1 Te 7N Ag/Cu 0.0...

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    Last Online Date: 07/11/2017 Last Update Date: 07/12/2017

  • Single Crystal Silicon Solar Wafer

    Wafer Square Side: 125x125±0.5mm, 156x156±0.5 mm
    Diagonal Length: 150±0.5mm, 200±0.5mm
    Growth Method: CZ
    Conductivity Type: P-type/boron
    Shape Wafer: Quasi-squared
    Surface Orientation: 100
    ...

    Main category: Semiconductor Materials
    Last Online Date: 01/03/2017 Last Update Date: 01/04/2017

  • Tungsten Carbide

    Tungsten Carbide
    Tungsten Carbide 99.8% WC Min
    Total C: 6.13+/-0.05% Free C: 0.06%max
    Fe 0.02%, Mo 0.01%, K/Na 0.0015% each,
    Si 0.004%, Al/Ca 0.002% each, Mg/S 0.001% each
    Size: 1.0-2.4/2.4-...

    Main category: Tungsten/n.e.s.
    Last Online Date: 01/03/2017 Last Update Date: 01/04/2017

  • High Purity Arsenic From Sichuan Wesetrn Minmetals

    High Purity Arsenic 5N 6N 7N 99.999%, 99.9999%, 99.99999%
    Impurity: PPM Max each (ICP-MS)
    As-5N Na/Al/K/Ca/Cr/Fe/Cu/Zn/Sb/Pb/Bi 0.5, Mg 0.2, Se 1.0, Ni 0.1
    As-6N Mg/Al/Cr/Fe/Se 0.05, Pb/Ni/Cu ...

    Last Online Date: 01/03/2017 Last Update Date: 01/04/2017

  • High Purity Selenium From Sichuan Western Minmetals

    High Purity Selenium 5N 6N 99.999%, 99.9999%
    Impurity PPM Max (ICP-MS)
    Se-5N Cu/Ag/Ni/Cd 0.2, Mg/Sb/Bi/In/Fe/Te/Ca/Al/Ti/Pb 0.5, Hg 1ppm max
    Se-6N Cu/Ni/Cd/Bi/Al/Pb/In/Ti 0.05, Mg/Te/Fe 0.1
    S...

    Main category: Semiconductor Materials
    Last Online Date: 01/03/2017 Last Update Date: 01/04/2017

  • CZ/FZ Diode Silicon Wafer From Sichuan Western Minmetals

    Diameter: 3” 4”
    Conductivity Type: P/Boron, N/Phosphorus
    Growth method: CZ, FZ
    Resistivity: 5-100Ω. cm
    Diameter: 76.2±0.3, 100±0.5 (mm)
    Thickness: 200-600 (um)
    Orientation: 111\100
    TTV: ≤1...

    Main category: Semiconductor Materials
    Last Online Date: 01/03/2017 Last Update Date: 01/04/2017

  • Single Crystal Silicon Solar Ingot From Sichuan Western Mi...

    Ingot Diameter: 150±0.5mm, 200±0.5mm
    Conductivity Type: P/Boron, N/Phosphorus
    Growth Method: CZ
    Ingot Shape: Quasi-squared, Cylinder
    Orientation: 111/100 ±2
    Resistivity: 0.5-3.0, 2.0-4.0, 3....

    Main category: Semiconductor Materials
    Last Online Date: 01/03/2017 Last Update Date: 01/04/2017

  • Tungsten Carbide Grit From Sichuan Western Minmetals

    Tungsten Carbide Grit/Crushed Tungsten Carbide
    (Crushed Cemented Carbide)
    Co 6-8%, Ti 0.2%Max, Fe 0.10%max WC Balance
    Size 8-14, 10-16, 12-20, 16-24, 60-80 Mesh
    Or 1.2-2.0, 1.0-1.65, 0.8-1.4,...

    Main category: Tungsten/n.e.s.
    Last Online Date: 01/03/2017 Last Update Date: 01/04/2017

  • Tungsten Carbide Pellet From Sichuan Western Minmetals

    Tungsten Carbide Pellet/Cemented Carbide Pellet WC /CO+Ni: 85 /14-15, 90/9.5-10, 93/6.5-7, 96.0-96.5/3.5-4 WC/Fe+Ni: 93/6-7, 96.5-97.0/3-4 WC/Co: 85/14-15, 90/9.5-10, 93/6.5-7, 95.5-96.5/3.5-4, 9...

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    Last Online Date: 01/03/2017 Last Update Date: 01/04/2017